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111
Bonding Structure and Electrical Properties of SiOC(-H) Films Deposited with a Methyltrimethoxysilane Precursor by Using Inductively Coupled Plasma Chemical Vapor Deposition
Bonding Structure and Electrical Properties of SiOC(-H) Films Deposited with a Methyltrimethoxysilane Precursor by Using Inductively Coupled Plasma Chemical Vapor Deposition
Kannan Meera., | 한국물리학회 | 2006 ,
112
Effects of Hydrogen Annealing on the Thermoelectric Properties of Electrodeposited Bi₂Te₃ for Nanowire Applications
Effects of Hydrogen Annealing on the Thermoelectric Properties of Electrodeposited Bi₂Te₃ for Nanowire Applications
Sung-woo Jun., | 한국물리학회 | 2006 ,
113
Application of a High-Durability DC arc Plasmatron to Plasma-Chemical Processing of Silicon Substrates
Application of a High-Durability DC arc Plasmatron to Plasma-Chemical Processing of Silicon Substrates
Valentin A. Riaby., | 한국물리학회 | 2006 ,
114
Novel Model for Film Formation in Plasma Processing
Novel Model for Film Formation in Plasma Processing
Leonid R. Shaginyan., | 한국물리학회 | 2006 ,
115
Analysis of Chemical Bond States and Electrical Properties of Stacked AlON/HfO₂ Gate Oxides Formed by Using a Layer-by-Layer Technique
Analysis of Chemical Bond States and Electrical Properties of Stacked AlON/HfO₂ Gate Oxides Formed by Using a Layer-by-Layer Technique
Wonjoon Choi., | 한국물리학회 | 2006 ,
116
Simulator for the Design Considered Critical Dimension Bias in Resist Reflow Process
Simulator for the Design Considered Critical Dimension Bias in Resist Reflow Process
Sang-kon Kim., | 한국물리학회 | 2006 ,
117
Immobilization and Observation of Particles with 3-Aminopropyltrimethoxysilane Studied by Scanning Probe Microscopy
Immobilization and Observation of Particles with 3-Aminopropyltrimethoxysilane Studied by Scanning Probe Microscopy
Y. J. Oh., | 한국물리학회 | 2006 ,
118
Barrier Property of a TiN Layer Prepared by Using Flow Modulation CVD for Cu Metallization
Barrier Property of a TiN Layer Prepared by Using Flow Modulation CVD for Cu Metallization
N. I. Cho., | 한국물리학회 | 2006 ,
119
Piezoelectric Properties of Highly Oriented Lead-Free Na0.5K0.5NbO₃ Films as Determined Using Piezoelectric Force Microscopy
Piezoelectric Properties of Highly Oriented Lead-Free Na0.5K0.5NbO₃ Films as Determined Using Piezoelectric Force Microscopy
J.S. Kim., | 한국물리학회 | 2006 ,
120
Effects of the Crystallographic Orientation of the Al₂O₃substrate on the Structural and the Optical Properties of ZnO Thin Films
Effects of the Crystallographic Orientation of the Al₂O₃substrate on the Structural and the Optical Properties of ZnO Thin Films
Chongmu Lee., | 한국물리학회 | 2006 ,
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