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991
A Rule-based Optimal Placement of Scaling Shifts in Floating-point to Fixed-point Conversion for a Fixed-point Processor
A Rule-based Optimal Placement of Scaling Shifts in Floating-point to Fixed-point Conversion for a Fixed-point Processor
Sanghyun Park., | 대한전자공학회 | 2006 ,
992
Call Papers on March 2007 Special Issu on Analog Circuits for Nanometer CMOS
Call Papers on March 2007 Special Issu on Analog Circuits for Nanometer CMOS
, | 대한전자공학회 | 2006 ,
993
Static-I-V Characteristics of Optically Controlled GAs MESFET's with Emphasis on Substrate-induced Effects
Static-I-V Characteristics of Optically Controlled GAs MESFET's with Emphasis on Substrate-induced Effects
Neti V. L. Narasimha Mury., | 대한전자공학회 | 2006 ,
994
Growth and Characteristics of Near-UV LED Structures on Wet-etched Patterned Sapphire Substrate
Growth and Characteristics of Near-UV LED Structures on Wet-etched Patterned Sapphire Substrate
Hung-Seob Cheong., | 대한전자공학회 | 2006 ,
995
A Fast and Robust Approach for Modeling of Nanoscale Compound Semiconductors for High Speed Digital Applications
A Fast and Robust Approach for Modeling of Nanoscale Compound Semiconductors for High Speed Digital Applications
Anil Ahlawat., | 대한전자공학회 | 2006 ,
996
Manufacturing of GaAs MMICs for Wireless Communications Applications
Manufacturing of GaAs MMICs for Wireless Communications Applications
Wu-Jing Ho., | 대한전자공학회 | 2006 ,
997
Call Papers on Sep.2006 Special Issue on Compound Semiconductors for Industrial Applications
Call Papers on Sep.2006 Special Issue on Compound Semiconductors for Industrial Applications
, | 대한전자공학회 | 2006 ,
998
Fabrication and Characteristics Study of n-Bi₂O₃/n-Si Heterojunction
Fabrication and Characteristics Study of n-Bi₂O₃/n-Si Heterojunction
Raid A. Ismail, | 대한전자공학회 | 2006 ,
999
Structure-related Characteristics of SiGe HBT and 2.4Ghz Down-conversion Mixer
Structure-related Characteristics of SiGe HBT and 2.4Ghz Down-conversion Mixer
Sang-Heung Lee., | 대한전자공학회 | 2006 ,
1000
DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sio.88 Geo.¹²(C) Heterostructure Channel
DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sio.88 Geo.¹²(C) Heterostructure Channel
Sang Sik Choi., | 대한전자공학회 | 2006 ,
처음이전9596979899100마지막
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2000 International Congress on Exercise Nutrition
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3rd Annual Message to Congress (Franklin Roosevelt)
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