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1
New Fabrication Technique Using Side-Wall-Type Plasma-Enhanced Chemical-Vapor Deposition for a Floating Gate Memory with a Si Nanodot
New Fabrication Technique Using Side-Wall-Type Plasma-Enhanced Chemical-Vapor Deposition for a Floating Gate Memory with a Si Nanodot
Kazunori Ichikawa., | 한국물리학회 | 2006 ,
2
Electrical and Optical Properties of Nitrogen-Incorporated Silicon-Oxide Films by Using Plasma-Enhanced Chemical-Vapor Deposition with Tetramethoxysilane /N₂O/NH₃ Gas
Electrical and Optical Properties of Nitrogen-Incorporated Silicon-Oxide Films by Using Plasma-Enhanced Chemical-Vapor Deposition with Tetramethoxysilane /N₂O/NH₃ Gas
C. J. Chung., | 한국물리학회 | 2006 ,
3
Post-Annealing Effect on SiOC(-H) Composite Films Deposited by Using Plasma-Enhanced Chemical-Vapor Deposition
Post-Annealing Effect on SiOC(-H) Composite Films Deposited by Using Plasma-Enhanced Chemical-Vapor Deposition
Kyoung Suk Oh., | 한국물리학회 | 2006 ,
4
Electron Emission from a Carbon Nanotube Frown in a Hole by Using a Triode Plasma-Enhanced Chemical Vapor Deposition
Electron Emission from a Carbon Nanotube Frown in a Hole by Using a Triode Plasma-Enhanced Chemical Vapor Deposition
Kyu Chang Park., | 한국물리학회 | 2006 ,
5
Characteristics of Al₂O₃ Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
Characteristics of Al₂O₃ Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
Koo, Jaehyoung, | 한국물리학회 | 2006 ,
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