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Technology of MRAM (Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell
Technology of MRAM (Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell
Detailed Information
- 자료유형
- 기사
- ISSN
- 15981657
- 저자명
- Park , Wanjun
- 서명/저자
- Technology of MRAM (Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell / Park , Wanjun , 공저 Song , I-Hun , Park , Sangjin , Kim , Teawan
- 발행사항
- 서울 : 대한전자공학회, 2002.
- 형태사항
- pp. 197-204
- 주기사항
- 권말 색인 및 참고문헌 수록
- 기본자료저록
- Journal of Semiconductor Technology and Science : Volume 2, Number 3, (2002 September) 2002, 09
- 원문정보
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60243015
MARC
008191113s2002 ulk aa eng■022 ▼a15981657
■1001 ▼aPark , Wanjun
■24510▼aTechnology of MRAM (Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell▼dPark , Wanjun ▼e공저 Song , I-Hun , Park , Sangjin , Kim , Teawan
■260 ▼a서울▼b대한전자공학회▼c2002.
■300 ▼app. 197-204
■500 ▼a권말 색인 및 참고문헌 수록
■7001 ▼aSong , I-Hun , Park , Sangjin , Kim , Teawan
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 2, Number 3, (2002 September)▼d2002, 09
■856 ▼uhttp://www.jsts.org
■SIS ▼aS013695▼b60054120▼h8▼s2▼fP
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