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Field Effect Transistor of Vertically Stacked, Self-assembled InAs Quantum Dots with Nonvolatile Memory
Field Effect Transistor of Vertically Stacked, Self-assembled InAs Quantum Dots with Nonvolatile Memory
Detailed Information
- 자료유형
- 기사
- ISSN
- 15981657
- 저자명
- Li , Shuwei
- 서명/저자
- Field Effect Transistor of Vertically Stacked, Self-assembled InAs Quantum Dots with Nonvolatile Memory / Li , Shuwei , 공저 Koike , Kazuto , Yano , Mitsuaki
- 발행사항
- 서울 : 대한전자공학회, 2002.
- 형태사항
- pp. 170-172
- 주기사항
- 권말 색인 및 참고문헌 수록
- 기본자료저록
- Journal of Semiconductor Technology and Science : Volume 2, Number 3, (2002 September) 2002, 09
- 원문정보
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60243007
MARC
008191113s2002 ulk aa eng■022 ▼a15981657
■1001 ▼aLi , Shuwei
■24510▼aField Effect Transistor of Vertically Stacked, Self-assembled InAs Quantum Dots with Nonvolatile Memory▼dLi , Shuwei ▼e공저 Koike , Kazuto , Yano , Mitsuaki
■260 ▼a서울▼b대한전자공학회▼c2002.
■300 ▼app. 170-172
■500 ▼a권말 색인 및 참고문헌 수록
■7001 ▼aKoike , Kazuto , Yano , Mitsuaki
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 2, Number 3, (2002 September)▼d2002, 09
■856 ▼uhttp://www.jsts.org
■SIS ▼aS013695▼b60054120▼h8▼s2▼fP
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