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Anomalous Subthreshold Characteristics of Shallow Trench - Isolated Submicron NMOSFET with Capped p - TEOS / SiN
Anomalous Subthreshold Characteristics of Shallow Trench - Isolated Submicron NMOSFET with Capped p - TEOS / SiN
Detailed Information
- 자료유형
- 기사
- ISSN
- 12297607
- 저자명
- Hyung J. Lee
- 서명/저자
- Anomalous Subthreshold Characteristics of Shallow Trench - Isolated Submicron NMOSFET with Capped p - TEOS / SiN / Hyung J. Lee
- 발행사항
- 서울 : 한국전기전자재료학회, 2003.
- 형태사항
- pp. 18-20
- 주기사항
- Includes Bibliography
- 원문정보
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60232656
MARC
008190927s2003 ulk aa eng■022 ▼a12297607
■1001 ▼aHyung J. Lee
■24510▼aAnomalous Subthreshold Characteristics of Shallow Trench - Isolated Submicron NMOSFET with Capped p - TEOS / SiN▼dHyung J. Lee
■260 ▼a서울▼b한국전기전자재료학회▼c2003.
■300 ▼app. 18-20
■500 ▼aIncludes Bibliography
■773 ▼tTransactions on Electrical and Electronic Materials▼gVol.3, No.3 (2002 September)▼d2003, 09
■856 ▼uhttp://www.kieeme.or.kr
■SIS ▼aS014498▼b60055341▼h8▼s2▼fP
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