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I-V and C-V Measurements of Fabricated P+/N junction Diode in Antimony doped ( 111 ) Silicon
I-V and C-V Measurements of Fabricated P+/N junction Diode in Antimony doped ( 111 ) Silicon
Detailed Information
- Material Type
- 기사
- ISSN
- 12297607
- Author
- Won Chae Jung
- Title/Author
- I-V and C-V Measurements of Fabricated P+/N junction Diode in Antimony doped ( 111 ) Silicon / Won Chae Jung
- Publish Info
- 서울 : 한국전기전자재료학회, 2003.
- Material Info
- pp. 10-15
- General Note
- Includes Bibliography
- Host Item Entry
- Transactions on Electrical and Electronic Materials : Vol.3, No.2 (2002 June) 2003, 06
- Electronic Location and Access
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60232647
MARC
008190927s2003 ulk aa eng■022 ▼a12297607
■1001 ▼aWon Chae Jung
■24510▼aI-V and C-V Measurements of Fabricated P+/N junction Diode in Antimony doped ( 111 ) Silicon▼dWon Chae Jung
■260 ▼a서울▼b한국전기전자재료학회▼c2003.
■300 ▼app. 10-15
■500 ▼aIncludes Bibliography
■773 ▼tTransactions on Electrical and Electronic Materials▼gVol.3, No.2 (2002 June)▼d2003, 06
■856 ▼uhttp://www.kieeme.or.kr
■SIS ▼aS014497▼b60055341▼h8▼s2▼fP
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