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Regular Paper / A Study on Pumping Effect of Oxygen in Polysilicon Gate Etching
Regular Paper / A Study on Pumping Effect of Oxygen in Polysilicon Gate Etching
Detailed Information
- 자료유형
- 기사
- ISSN
- 12297607
- 저자명
- Nam Hoon Kim
- 서명/저자
- Regular Paper / A Study on Pumping Effect of Oxygen in Polysilicon Gate Etching / Nam Hoon Kim , Sung Wook Shin , Seok Bin Yu , Chang Il Kim , Eui Goo Chang
- 발행사항
- 서울 : 한국전기전자재료학회, 2001.
- 형태사항
- pp. 1-6
- 주기사항
- Includes Bibliography
- 원문정보
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60232511
MARC
008190927s2001 ulk aa eng■022 ▼a12297607
■1001 ▼aNam Hoon Kim
■24510▼aRegular Paper / A Study on Pumping Effect of Oxygen in Polysilicon Gate Etching▼dNam Hoon Kim ▼e Sung Wook Shin , Seok Bin Yu , Chang Il Kim , Eui Goo Chang
■260 ▼a서울▼b한국전기전자재료학회▼c2001.
■300 ▼app. 1-6
■500 ▼aIncludes Bibliography
■7001 ▼aSung Wook Shin , Seok Bin Yu , Chang Il Kim , Eui Goo Chang
■773 ▼tTransactions on Electrical and Electronic Materials▼gVol.1, No.2 (2000 June)▼d2001, 06
■856 ▼uhttp://www.kieeme.or.kr
■SIS ▼aS014489▼b60055341▼h8▼s2▼fP
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