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The Effect of Hydrogen Plasma on Surface Roughness and Activation in SOI Wafer Fabrication
The Effect of Hydrogen Plasma on Surface Roughness and Activation in SOI Wafer Fabrication
Detailed Information
- 자료유형
- 기사
- ISSN
- 12297607
- 저자명
- Woo Beom Choi
- 서명/저자
- The Effect of Hydrogen Plasma on Surface Roughness and Activation in SOI Wafer Fabrication / Woo Beom Choi , 공저 Ho Cheol Kang , Man Young Sung
- 발행사항
- 서울 : 한국전기전자재료학회, 2001.
- 형태사항
- pp. 6-11
- 주기사항
- 권말 참고문헌 수록
- 원문정보
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60220188
MARC
008190610s2001 ulk aa eng■022 ▼a12297607
■1001 ▼aWoo Beom Choi
■24510▼aThe Effect of Hydrogen Plasma on Surface Roughness and Activation in SOI Wafer Fabrication▼dWoo Beom Choi ▼e공저 Ho Cheol Kang , Man Young Sung
■260 ▼a서울▼b한국전기전자재료학회▼c2001.
■300 ▼app. 6-11
■500 ▼a권말 참고문헌 수록
■7001 ▼aHo Cheol Kang , Man Young Sung
■773 ▼tTransactions on Electrical and Electronic Materials▼gVol.1, No.1 (2000 March)▼d2001, 03
■856 ▼uhttp://www.kieeme.or.kr
■SIS ▼aS014488▼b60055341▼h8▼s2▼fP
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