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Device Characteristics of A1GaN/GaN MIS-HFET using A12O3 Based High-k Dielectric
Device Characteristics of A1GaN/GaN MIS-HFET using A12O3 Based High-k Dielectric
Detailed Information
- 자료유형
- 기사
- ISSN
- 15981657
- 저자명
- Ki-Yeol Park
- 서명/저자
- Device Characteristics of A1GaN/GaN MIS-HFET using A12O3 Based High-k Dielectric / Ki-Yeol Park , 공저 Hyun-Ick Cho, Eun-Jin Lee, Sung-Ho Hanm, Jung-Hee Lee
- 발행사항
- 서울 : 대한전자공학회, 2005.
- 형태사항
- pp. 107-112
- 주기사항
- 참고문헌 수록
- 원문정보
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60202573
MARC
008190108s2005 ulk aa eng■022 ▼a15981657
■1001 ▼aKi-Yeol Park
■24510▼aDevice Characteristics of A1GaN/GaN MIS-HFET using A12O3 Based High-k Dielectric▼dKi-Yeol Park▼e공저 Hyun-Ick Cho, Eun-Jin Lee, Sung-Ho Hanm, Jung-Hee Lee
■260 ▼a서울▼b대한전자공학회▼c2005.
■300 ▼app. 107-112
■500 ▼a참고문헌 수록
■7001 ▼aHyun-Ick Cho, Eun-Jin Lee, Sung-Ho Hanm, Jung-Hee Lee
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 5, Number 2, (2005 June)▼d2005, 06
■856 ▼ahttp://www.jsts.org
■SIS ▼aS013706▼b60054120▼h8▼s2▼fP
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