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A Low Dark Current CMOS Image Sensor Pixel with a Photodiode Structure Enclosed by P-well
A Low Dark Current CMOS Image Sensor Pixel with a Photodiode Structure Enclosed by P-well
Detailed Information
- Material Type
- 기사
- ISSN
- 15981657
- Author
- Sang-Wook han
- Title/Author
- A Low Dark Current CMOS Image Sensor Pixel with a Photodiode Structure Enclosed by P-well / Sang-Wook han ; 공저 Seong-Jin Kim, Euisik Yoon
- Publish Info
- 서울 : 대한전자공학회, 2005.
- Material Info
- pp. 102-106
- General Note
- 참고문헌 수록
- Added Entry-Personal Name
- Seong-Jin Kim, Euisik Yoon
- Host Item Entry
- Journal of Semiconductor Technology and Science : Volume 5, Number 2, (2005 June) 2005, 06
- Electronic Location and Access
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60202572
MARC
008190108s2005 ulk aa eng■022 ▼a15981657
■1001 ▼aSang-Wook han
■24510▼aA Low Dark Current CMOS Image Sensor Pixel with a Photodiode Structure Enclosed by P-well▼dSang-Wook han▼e공저 Seong-Jin Kim, Euisik Yoon
■260 ▼a서울▼b대한전자공학회▼c2005.
■300 ▼app. 102-106
■500 ▼a참고문헌 수록
■7001 ▼aSeong-Jin Kim, Euisik Yoon
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 5, Number 2, (2005 June)▼d2005, 06
■856 ▼ahttp://www.jsts.org
■SIS ▼aS013706▼b60054120▼h8▼s2▼fP
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