서브메뉴
검색
A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted Short - Channel Ion - Implanted Silicon MESFET's
A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted Short - Channel Ion - Implanted Silicon MESFET's
Detailed Information
- 자료유형
- 기사
- ISSN
- 15981657
- 저자명
- S. Jit
- 서명/저자
- A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted Short - Channel Ion - Implanted Silicon MESFETs / S. Jit , 공저 Saurabh Morarka, Saurabh Mishra
- 발행사항
- 서울 : 대한전자공학회, 2002.
- 형태사항
- pp. 173-181
- 주기사항
- 참고문헌 수록
- 기본자료저록
- Journal of Semiconductor Technology and Science : Volume 2, Number 4, (2002 December) 2002, 12
- 원문정보
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60202555
MARC
008190108s2002 ulk aa eng■022 ▼a15981657
■1001 ▼aS. Jit
■24510▼aA 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted Short - Channel Ion - Implanted Silicon MESFET's▼dS. Jit▼e공저 Saurabh Morarka, Saurabh Mishra
■260 ▼a서울▼b대한전자공학회▼c2002.
■300 ▼app. 173-181
■500 ▼a참고문헌 수록
■7001 ▼aSaurabh Morarka, Saurabh Mishra
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 2, Number 4, (2002 December)▼d2002, 12
■856 ▼ahttp://www.jsts.org
■SIS ▼aS013696▼b60054120▼h8▼s2▼fP
Preview
Export
ChatGPT Discussion
AI Recommended Related Books
Подробнее информация.
- Бронирование
- не существует
- моя папка
- Reference Materials for Thesis Writing
- Reference Materials for Research Ethics
- Job-Related Books
