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A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted Short - Channel Ion - Implanted Silicon MESFET's
A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted Short - Channel Ion - Implanted Silicon MESFET's
Detailed Information
- Material Type
- 기사
- ISSN
- 15981657
- Author
- S. Jit
- Title/Author
- A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted Short - Channel Ion - Implanted Silicon MESFETs / S. Jit ; 공저 Saurabh Morarka, Saurabh Mishra
- Publish Info
- 서울 : 대한전자공학회, 2002.
- Material Info
- pp. 173-181
- General Note
- 참고문헌 수록
- Added Entry-Personal Name
- Saurabh Morarka, Saurabh Mishra
- Host Item Entry
- Journal of Semiconductor Technology and Science : Volume 2, Number 4, (2002 December) 2002, 12
- Electronic Location and Access
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60202555
MARC
008190108s2002 ulk aa eng■022 ▼a15981657
■1001 ▼aS. Jit
■24510▼aA 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted Short - Channel Ion - Implanted Silicon MESFET's▼dS. Jit▼e공저 Saurabh Morarka, Saurabh Mishra
■260 ▼a서울▼b대한전자공학회▼c2002.
■300 ▼app. 173-181
■500 ▼a참고문헌 수록
■7001 ▼aSaurabh Morarka, Saurabh Mishra
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 2, Number 4, (2002 December)▼d2002, 12
■856 ▼ahttp://www.jsts.org
■SIS ▼aS013696▼b60054120▼h8▼s2▼fP
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