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Technology MRAM(Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell
Technology MRAM(Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell
Detailed Information
- 자료유형
- 기사
- ISSN
- 15981657
- 저자명
- Wanjun Park
- 서명/저자
- Technology MRAM(Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell / Wanjun Park , 공저 I-Hun Song, Sangjin Park, Teawan Kim
- 발행사항
- 서울 : 대한전자공학회, 2002.
- 형태사항
- pp. 197-204
- 주기사항
- 참고문헌 수록
- 기본자료저록
- Journal of Semiconductor Technology and Science : Volume 2, Number 4, (2002 December) 2002, 12
- 원문정보
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60202544
MARC
008190108s2002 ulk aa eng■022 ▼a15981657
■1001 ▼aWanjun Park
■24510▼aTechnology MRAM(Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell▼dWanjun Park▼e공저 I-Hun Song, Sangjin Park, Teawan Kim
■260 ▼a서울▼b대한전자공학회▼c2002.
■300 ▼app. 197-204
■500 ▼a참고문헌 수록
■7001 ▼aI-Hun Song, Sangjin Park, Teawan Kim
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 2, Number 4, (2002 December)▼d2002, 12
■856 ▼ahttp://www.jsts.org
■SIS ▼aS013696▼b60054120▼h8▼s2▼fP
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