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Effect on 4H-SiC Schottky Rectifiers of Ar Discharges Generated in A Planar Inductively Coupled Plasma Source
Effect on 4H-SiC Schottky Rectifiers of Ar Discharges Generated in A Planar Inductively Co...
Effect on 4H-SiC Schottky Rectifiers of Ar Discharges Generated in A Planar Inductively Coupled Plasma Source

Detailed Information

Material Type  
 기사
ISSN  
15981657
Author  
G.S.Cho
Title/Author  
Effect on 4H-SiC Schottky Rectifiers of Ar Discharges Generated in A Planar Inductively Coupled Plasma Source / G.S.Cho ; 공저 M.H. Jeon, J.W.Lee, S.Nigam, F.Ren, G.Y.Chung, M.F.MacMillan, S.J.Pearton 40nm InGaAs HEMTs with 65% Strained Channel Fabricated with Damage-Free SiOw/SiNx Side-wall Gate Process
Publish Info  
서울 : 대한전자공학회, 2003.
Material Info  
pp. 13-20
General Note  
참고문헌 수록
Added Entry-Personal Name  
M.H. Jeon, J.W.Lee, S.Nigam, F.Ren, G.Y.Chung, M.F.MacMillan, S.J.Pearton 40nm InGaAs HEMT's with 65% Strained Channel Fabricated with Damage-Free SiOw/SiNx Side-wall Gate Process
Host Item Entry  
Journal of Semiconductor Technology and Science : Volume 3, Number 1, (2003 March) 2003, 03
Electronic Location and Access  
 url
모체레코드  
모체정보확인
Control Number  
kjul:60202519

MARC

 008190108s2003        ulk                          aa    eng
■022    ▼a15981657
■1001  ▼aG.S.Cho
■24510▼aEffect  on  4H-SiC  Schottky  Rectifiers  of  Ar  Discharges  Generated  in  A  Planar  Inductively  Coupled  Plasma  Source▼dG.S.Cho▼e공저  M.H.  Jeon,  J.W.Lee,  S.Nigam,  F.Ren,  G.Y.Chung,  M.F.MacMillan,  S.J.Pearton  40nm  InGaAs  HEMT's  with  65%  Strained  Channel  Fabricated  with  Damage-Free  SiOw/SiNx  Side-wall  Gate  Process
■260    ▼a서울▼b대한전자공학회▼c2003.
■300    ▼app.  13-20
■500    ▼a참고문헌  수록
■7001  ▼aM.H.  Jeon,  J.W.Lee,  S.Nigam,  F.Ren,  G.Y.Chung,  M.F.MacMillan,  S.J.Pearton  40nm  InGaAs  HEMT's  with  65%  Strained  Channel  Fabricated  with  Damage-Free  SiOw/SiNx  Side-wall  Gate  Process
■773    ▼tJournal  of  Semiconductor  Technology  and  Science▼gVolume  3,  Number  1,  (2003  March)▼d2003,  03
■856    ▼ahttp://www.jsts.org
■SIS    ▼aS013697▼b60054120▼h8▼s2▼fP

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