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Effect on 4H-SiC Schottky Rectifiers of Ar Discharges Generated in A Planar Inductively Coupled Plasma Source
Effect on 4H-SiC Schottky Rectifiers of Ar Discharges Generated in A Planar Inductively Coupled Plasma Source
Detailed Information
- 자료유형
- 기사
- ISSN
- 15981657
- 저자명
- G.S.Cho
- 서명/저자
- Effect on 4H-SiC Schottky Rectifiers of Ar Discharges Generated in A Planar Inductively Coupled Plasma Source / G.S.Cho , 공저 M.H. Jeon, J.W.Lee, S.Nigam, F.Ren, G.Y.Chung, M.F.MacMillan, S.J.Pearton 40nm InGaAs HEMTs with 65% Strained Channel Fabricated with Damage-Free SiOw/SiNx Side-wall Gate Process
- 발행사항
- 서울 : 대한전자공학회, 2003.
- 형태사항
- pp. 13-20
- 주기사항
- 참고문헌 수록
- 원문정보
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60202519
MARC
008190108s2003 ulk aa eng■022 ▼a15981657
■1001 ▼aG.S.Cho
■24510▼aEffect on 4H-SiC Schottky Rectifiers of Ar Discharges Generated in A Planar Inductively Coupled Plasma Source▼dG.S.Cho▼e공저 M.H. Jeon, J.W.Lee, S.Nigam, F.Ren, G.Y.Chung, M.F.MacMillan, S.J.Pearton 40nm InGaAs HEMT's with 65% Strained Channel Fabricated with Damage-Free SiOw/SiNx Side-wall Gate Process
■260 ▼a서울▼b대한전자공학회▼c2003.
■300 ▼app. 13-20
■500 ▼a참고문헌 수록
■7001 ▼aM.H. Jeon, J.W.Lee, S.Nigam, F.Ren, G.Y.Chung, M.F.MacMillan, S.J.Pearton 40nm InGaAs HEMT's with 65% Strained Channel Fabricated with Damage-Free SiOw/SiNx Side-wall Gate Process
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 3, Number 1, (2003 March)▼d2003, 03
■856 ▼ahttp://www.jsts.org
■SIS ▼aS013697▼b60054120▼h8▼s2▼fP
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