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Progress in Novel Oxides for Gate Dielectrics and Surface Passivation of GaN/A1GaN Heterostructure Field Effect Transistors
Progress in Novel Oxides for Gate Dielectrics and Surface Passivation of GaN/A1GaN Heterostructure Field Effect Transistors
Detailed Information
- 자료유형
- 기사
- ISSN
- 15981657
- 저자명
- C.R.Abernathy
- 서명/저자
- Progress in Novel Oxides for Gate Dielectrics and Surface Passivation of GaN/A1GaN Heterostructure Field Effect Transistors / C.R.Abernathy , 공저 B.P.Gila, A.H.Onstine, S.J.Peraton, Jihyun Kim, B.Luo, R.Mehandru, F.Ren, J.K.Gillespie, R.C.Fitch, J.sewell, R. Dettmer, G.D Via, A. Crespo, T.J. Jenkins, Y. Irokawa
- 발행사항
- 서울 : 대한전자공학회, 2003.
- 형태사항
- pp. 13-20
- 주기사항
- 참고문헌 수록
- 원문정보
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60202517
MARC
008190108s2003 ulk aa eng■022 ▼a15981657
■1001 ▼aC.R.Abernathy
■24510▼aProgress in Novel Oxides for Gate Dielectrics and Surface Passivation of GaN/A1GaN Heterostructure Field Effect Transistors▼dC.R.Abernathy▼e공저 B.P.Gila, A.H.Onstine, S.J.Peraton, Jihyun Kim, B.Luo, R.Mehandru, F.Ren, J.K.Gillespie, R.C.Fitch, J.sewell, R. Dettmer, G.D Via, A. Crespo, T.J. Jenkins, Y. Irokawa
■260 ▼a서울▼b대한전자공학회▼c2003.
■300 ▼app. 13-20
■500 ▼a참고문헌 수록
■7001 ▼aB.P.Gila, A.H.Onstine, S.J.Peraton, Jihyun Kim, B.Luo, R.Mehandru, F.Ren, J.K.Gillespie, R.C.Fitch, J.sewell, R. Dettmer, G.D Via, A. Crespo, T.J. Jenkins, Y. Irokawa
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 3, Number 1, (2003 March)▼d2003, 03
■856 ▼ahttp://www.jsts.org
■SIS ▼aS013697▼b60054120▼h8▼s2▼fP
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