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Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM
Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM
Detailed Information
- Material Type
- 기사
- ISSN
- 15981657
- Author
- S.H.Shin
- Title/Author
- Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM / S.H.Shin ; 공저 S.H.Lee, Y.S.Kim, J.H.Heo, D.I. Bae, S.H.Hong, S.H.Park, J.W.Lee, J.G.Lee, J.H.Oh, M.S.Kim, C.H.Cho, T.Y.Chung, Kinam Kim
- Publish Info
- 서울 : 대한전자공학회, 2003.
- Material Info
- pp. 69-75
- General Note
- 참고문헌 수록
- Added Entry-Personal Name
- S.H.Lee, Y.S.Kim, J.H.Heo, D.I. Bae, S.H.Hong, S.H.Park, J.W.Lee, J.G.Lee, J.H.Oh, M.S.Kim, C.H.Cho, T.Y.Chung, Kinam Kim
- Host Item Entry
- Journal of Semiconductor Technology and Science : Volume 3, Number 2, (2003 June) 2003, 06
- Electronic Location and Access
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60202506
MARC
008190108s2003 ulk aa eng■022 ▼a15981657
■1001 ▼aS.H.Shin
■24510▼aData Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM▼dS.H.Shin▼e공저 S.H.Lee, Y.S.Kim, J.H.Heo, D.I. Bae, S.H.Hong, S.H.Park, J.W.Lee, J.G.Lee, J.H.Oh, M.S.Kim, C.H.Cho, T.Y.Chung, Kinam Kim
■260 ▼a서울▼b대한전자공학회▼c2003.
■300 ▼app. 69-75
■500 ▼a참고문헌 수록
■7001 ▼aS.H.Lee, Y.S.Kim, J.H.Heo, D.I. Bae, S.H.Hong, S.H.Park, J.W.Lee, J.G.Lee, J.H.Oh, M.S.Kim, C.H.Cho, T.Y.Chung, Kinam Kim
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 3, Number 2, (2003 June)▼d2003, 06
■856 ▼ahttp://www.jsts.org
■SIS ▼aS013698▼b60054120▼h8▼s2▼fP
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