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Electrical Characteristics of InA1As/InGaAs/InA1As Pseudomorphic High Electron Mobility Transistors under Sub-Bandgap Photonic Excitation
Electrical Characteristics of InA1As/InGaAs/InA1As Pseudomorphic High Electron Mobility Transistors under Sub-Bandgap Photonic Excitation
Detailed Information
- 자료유형
- 기사
- ISSN
- 15981657
- 저자명
- H.T.Kim
- 서명/저자
- Electrical Characteristics of InA1As/InGaAs/InA1As Pseudomorphic High Electron Mobility Transistors under Sub-Bandgap Photonic Excitation / H.T.Kim , 공저 D.M.Kim
- 발행사항
- 서울 : 대한전자공학회, 2003.
- 형태사항
- pp. 145-152
- 주기사항
- 참고문헌 수록
- 기타저자
- D.M.Kim
- 기본자료저록
- Journal of Semiconductor Technology and Science : Volume 3, Number 3, (2003 September) 2003, 09
- 원문정보
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60202501
MARC
008190108s2003 ulk aa eng■022 ▼a15981657
■1001 ▼aH.T.Kim
■24510▼aElectrical Characteristics of InA1As/InGaAs/InA1As Pseudomorphic High Electron Mobility Transistors under Sub-Bandgap Photonic Excitation▼dH.T.Kim▼e공저 D.M.Kim
■260 ▼a서울▼b대한전자공학회▼c2003.
■300 ▼app. 145-152
■500 ▼a참고문헌 수록
■7001 ▼aD.M.Kim
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 3, Number 3, (2003 September)▼d2003, 09
■856 ▼ahttp://www.jsts.org
■SIS ▼aS013699▼b60054120▼h8▼s2▼fP
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