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Flowable Oxide CVD Process for Shallow Trench Isolation in Silicon Semiconductor
Flowable Oxide CVD Process for Shallow Trench Isolation in Silicon Semiconductor
Detailed Information
- 자료유형
- 기사
- ISSN
- 15981657
- 저자명
- Sung-Woong Chung
- 서명/저자
- Flowable Oxide CVD Process for Shallow Trench Isolation in Silicon Semiconductor / Sung-Woong Chung , 공저 Sang-Tae Ahn, Hyun-Chul Sohn, Sang-Don Lee
- 발행사항
- 서울 : 대한전자공학회, 2004.
- 형태사항
- pp. 45-51
- 주기사항
- 참고문헌 수록
- 원문정보
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60202491
MARC
008190108s2004 ulk aa eng■022 ▼a15981657
■1001 ▼aSung-Woong Chung
■24510▼aFlowable Oxide CVD Process for Shallow Trench Isolation in Silicon Semiconductor▼dSung-Woong Chung▼e공저 Sang-Tae Ahn, Hyun-Chul Sohn, Sang-Don Lee
■260 ▼a서울▼b대한전자공학회▼c2004.
■300 ▼app. 45-51
■500 ▼a참고문헌 수록
■7001 ▼aSang-Tae Ahn, Hyun-Chul Sohn, Sang-Don Lee
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 4, Number 1, (2004 March)▼d2004, 03
■856 ▼ahttp://www.jsts.org
■SIS ▼aS013701▼b60054120▼h8▼s2▼fP
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