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Gate Tunneling Current and Quantum Effects in Deep Scaled MOSFETs
Gate Tunneling Current and Quantum Effects in Deep Scaled MOSFETs
Detailed Information
- Material Type
- 기사
- ISSN
- 15981657
- Author
- Chang-Hoon Choi
- Title/Author
- Gate Tunneling Current and Quantum Effects in Deep Scaled MOSFETs / Chang-Hoon Choi ; 공저 Robert W. Dutton
- Publish Info
- 서울 : 대한전자공학회, 2004.
- Material Info
- pp. 27-31
- General Note
- 참고문헌 수록
- Added Entry-Personal Name
- Robert W. Dutton
- Host Item Entry
- Journal of Semiconductor Technology and Science : Volume 4, Number 1, (2004 March) 2004, 03
- Electronic Location and Access
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60202488
MARC
008190108s2004 ulk aa eng■022 ▼a15981657
■1001 ▼aChang-Hoon Choi
■24510▼aGate Tunneling Current and Quantum Effects in Deep Scaled MOSFETs▼dChang-Hoon Choi▼e공저 Robert W. Dutton
■260 ▼a서울▼b대한전자공학회▼c2004.
■300 ▼app. 27-31
■500 ▼a참고문헌 수록
■7001 ▼aRobert W. Dutton
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 4, Number 1, (2004 March)▼d2004, 03
■856 ▼ahttp://www.jsts.org
■SIS ▼aS013701▼b60054120▼h8▼s2▼fP
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