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Theoretical and Experimental Analysis of Back-Gated SOI MOSFETs and Back-Floating NVRAMs
Theoretical and Experimental Analysis of Back-Gated SOI MOSFETs and Back-Floating NVRAMs
Detailed Information
- 자료유형
- 기사
- ISSN
- 15981657
- 저자명
- Uygar Avci
- 서명/저자
- Theoretical and Experimental Analysis of Back-Gated SOI MOSFETs and Back-Floating NVRAMs / Uygar Avci , 공저 Arvind Kumar, Sandip Tiwari
- 발행사항
- 서울 : 대한전자공학회, 2004.
- 형태사항
- pp. 18-26
- 주기사항
- 참고문헌 수록
- 원문정보
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60202487
MARC
008190108s2004 ulk aa eng■022 ▼a15981657
■1001 ▼aUygar Avci
■24510▼aTheoretical and Experimental Analysis of Back-Gated SOI MOSFETs and Back-Floating NVRAMs▼dUygar Avci▼e공저 Arvind Kumar, Sandip Tiwari
■260 ▼a서울▼b대한전자공학회▼c2004.
■300 ▼app. 18-26
■500 ▼a참고문헌 수록
■7001 ▼aArvind Kumar, Sandip Tiwari
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 4, Number 1, (2004 March)▼d2004, 03
■856 ▼ahttp://www.jsts.org
■SIS ▼aS013701▼b60054120▼h8▼s2▼fP
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