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Compact Gate Capacitance Model with Polysilicon Depletion Effect for MOS Device
Compact Gate Capacitance Model with Polysilicon Depletion Effect for MOS Device
Detailed Information
- 자료유형
- 기사
- ISSN
- 15981657
- 저자명
- H. Abebe
- 서명/저자
- Compact Gate Capacitance Model with Polysilicon Depletion Effect for MOS Device / H. Abebe , 공저 H. Morris, E. Cumberbatch, V. Tyree
- 발행사항
- 서울 : 대한전자공학회, 2007.
- 형태사항
- pp. 209-213
- 주기사항
- 참고문헌 수록
- 기본자료저록
- Journal of Semiconductor Technology and Science : Volume 7, Number 3, (2007 September) 2007, 09
- 원문정보
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60202475
MARC
008190107s2007 ulk aa eng■022 ▼a15981657
■1001 ▼aH. Abebe
■24510▼aCompact Gate Capacitance Model with Polysilicon Depletion Effect for MOS Device▼dH. Abebe▼e공저 H. Morris, E. Cumberbatch, V. Tyree
■260 ▼a서울▼b대한전자공학회▼c2007.
■300 ▼app. 209-213
■500 ▼a참고문헌 수록
■7001 ▼aH. Morris, E. Cumberbatch, V. Tyree
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 7, Number 3, (2007 September)▼d2007, 09
■856 ▼ahttp://www.jsts.org
■SIS ▼aS043240▼b60054120▼h8▼s2▼fP
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