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High-Rate Laser Ablation For Through -Wafer Via Holes in SiC Substrates and GaN/AIN/SiC Templates
High-Rate Laser Ablation For Through -Wafer Via Holes in SiC Substrates and GaN/AIN/SiC Templates
상세정보
- 자료유형
- 기사
- ISSN
- 15981657
- 저자명
- S. Kim
- 서명/저자
- High-Rate Laser Ablation For Through -Wafer Via Holes in SiC Substrates and GaN/AIN/SiC Templates / S. Kim , 공저 B.S.Bang, F.Ren J.dEntremont, W.Blumenfeld, T.Cordock, S.J.Pearton
- 발행사항
- 서울 : 대한전자공학회, 2004.
- 형태사항
- pp. 217-221
- 주기사항
- 참고문헌 수록
- 기본자료저록
- Journal of Semiconductor Technology and Science : Volume 4, Number 3, (2004 September) 2004, 09
- 원문정보
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60202462
MARC
008190107s2004 ulk aa eng■022 ▼a15981657
■1001 ▼aS. Kim
■24510▼aHigh-Rate Laser Ablation For Through -Wafer Via Holes in SiC Substrates and GaN/AIN/SiC Templates▼dS. Kim▼e공저 B.S.Bang, F.Ren J.d'Entremont, W.Blumenfeld, T.Cordock, S.J.Pearton
■260 ▼a서울▼b대한전자공학회▼c2004.
■300 ▼app. 217-221
■500 ▼a참고문헌 수록
■7001 ▼aB.S.Bang, F.Ren J.d'Entremont, W.Blumenfeld, T.Cordock, S.J.Pearton
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 4, Number 3, (2004 September)▼d2004, 09
■856 ▼ahttp://www.jsts.org
■SIS ▼aS013703▼b60054120▼h8▼s2▼fP
