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MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design
MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design
Detailed Information
- 자료유형
- 기사
- ISSN
- 15981657
- 서명/저자
- MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design / M.Miura-Mattausch , 공저 H.J.Mattausch, T. Ohguro, T.lizuka, M.Taguchi, S.Kumashiro, S.Miyamoto
- 발행사항
- 서울 : 대한전자공학회, 2004.
- 형태사항
- pp. 133-140
- 주기사항
- 참고문헌 수록
- 기본자료저록
- Journal of Semiconductor Technology and Science : Volume 4, Number 3, (2004 September) 2004, 09
- 원문정보
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60202452
MARC
008190107s2004 ulk aa eng■022 ▼a15981657
■1001 ▼aM.Miura-Mattausch
■24510▼aMOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design▼dM.Miura-Mattausch▼e공저 H.J.Mattausch, T. Ohguro, T.lizuka, M.Taguchi, S.Kumashiro, S.Miyamoto
■260 ▼a서울▼b대한전자공학회▼c2004.
■300 ▼app. 133-140
■500 ▼a참고문헌 수록
■7001 ▼aH.J.Mattausch, T. Ohguro, T.lizuka, M.Taguchi, S.Kumashiro, S.Miyamoto
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 4, Number 3, (2004 September)▼d2004, 09
■856 ▼ahttp://www.jsts.org
■SIS ▼aS013703▼b60054120▼h8▼s2▼fP
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