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Study for the Reliability of Nano-Scale MOS Device that Experienced Implantation of Hydrogen or deuterium at the Back-End of the Process Line
Study for the Reliability of Nano-Scale MOS Device that Experienced Implantation of Hydrogen or deuterium at the Back-End of the Process Line
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Jae-Sung Lee
- 서명/저자
- Study for the Reliability of Nano-Scale MOS Device that Experienced Implantation of Hydrogen or deuterium at the Back-End of the Process Line / Jae-Sung Lee , Dae-Gab Lee , Seung-Woo Do , Yong-Hyun Lee
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 1561-1565
- 기타저자
- Dae-Gab Lee
- 기타저자
- Seung-Woo Do
- 기타저자
- Yong-Hyun Lee
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60148170
MARC
008101223s2007 ulka a eng■022 ▼a03744884
■1001 ▼aJae-Sung Lee
■24510▼aStudy for the Reliability of Nano-Scale MOS Device that Experienced Implantation of Hydrogen or deuterium at the Back-End of the Process Line▼dJae-Sung Lee▼eDae-Gab Lee▼eSeung-Woo Do▼eYong-Hyun Lee
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 1561-1565
■7001 ▼aDae-Gab Lee
■7001 ▼aSeung-Woo Do
■7001 ▼aYong-Hyun Lee
■773 ▼tJournal of The Korean Physical Society▼gVol. 50 No. 5 Pt.1(2007. 5)▼d2007, 05
■SIS ▼aS040250▼b60077342▼h8▼s2▼fP
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