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Proton Implantation Mechanism in GaN Layer Transfer by Using the Ion-Cut Process
Proton Implantation Mechanism in GaN Layer Transfer by Using the Ion-Cut Process
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- H. J. Woo
- 서명/저자
- Proton Implantation Mechanism in GaN Layer Transfer by Using the Ion-Cut Process / H. J. Woo , H.W. Choi , G. D. Kim , W. Hong , J. K. Kim , C. H. Eum , Y. H. Bae
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 1542-1547
- 기타저자
- H.W. Choi
- 기타저자
- G. D. Kim
- 기타저자
- W. Hong
- 기타저자
- J. K. Kim
- 기타저자
- C. H. Eum
- 기타저자
- Y. H. Bae
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60148132
MARC
008101221s2007 ulka a eng■022 ▼a03744884
■1001 ▼aH. J. Woo
■24510▼aProton Implantation Mechanism in GaN Layer Transfer by Using the Ion-Cut Process▼dH. J. Woo▼eH.W. Choi▼eG. D. Kim▼eW. Hong▼eJ. K. Kim▼eC. H. Eum▼eY. H. Bae
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 1542-1547
■7001 ▼aH.W. Choi
■7001 ▼aG. D. Kim
■7001 ▼aW. Hong
■7001 ▼aJ. K. Kim
■7001 ▼aC. H. Eum
■7001 ▼aY. H. Bae
■773 ▼tJournal of The Korean Physical Society▼gVol. 50 No. 5 Pt.1(2007. 5)▼d2007, 05
■SIS ▼aS040250▼b60077342▼h8▼s2▼fP
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