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A Study of the Electrical Properties at the Interface in MIS Structure with Low-Dielectric-Constant SiOC(-H) Films Deposited by Using UV-Source -Assisted PECVD
A Study of the Electrical Properties at the Interface in MIS Structure with Low-Dielectric-Constant SiOC(-H) Films Deposited by Using UV-Source -Assisted PECVD
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Chang Young Kim
- 서명/저자
- A Study of the Electrical Properties at the Interface in MIS Structure with Low-Dielectric-Constant SiOC(-H) Films Deposited by Using UV-Source -Assisted PECVD / Chang Young Kim , Yong Jun Jang , R. Navamathavan , Chi Kyu Choi
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 1125-1129
- 기타저자
- Yong Jun Jang
- 기타저자
- R. Navamathavan
- 기타저자
- Chi Kyu Choi
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60147728
MARC
008101209s2007 ulka a eng■022 ▼a03744884
■1001 ▼aChang Young Kim
■24510▼aA Study of the Electrical Properties at the Interface in MIS Structure with Low-Dielectric-Constant SiOC(-H) Films Deposited by Using UV-Source -Assisted PECVD▼dChang Young Kim▼eYong Jun Jang▼eR. Navamathavan▼eChi Kyu Choi
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 1125-1129
■7001 ▼aYong Jun Jang
■7001 ▼aR. Navamathavan
■7001 ▼aChi Kyu Choi
■773 ▼tJournal of The Korean Physical Society▼gVol. 50 No. 4 (2007. 4)▼d2007, 04
■SIS ▼aS039453▼b60077342▼h8▼s2▼fP
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