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Trapping Center Parameters and Optical Absorption in Quaternary Tl₄In₃GaS8, Tl₄In₃Ga₃Se8, and Tl₄In₃GaS₄ Semiconductors
Trapping Center Parameters and Optical Absorption in Quaternary Tl₄In₃GaS8, Tl₄In₃Ga₃Se8, and Tl₄In₃GaS₄ Semiconductors
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- N. M. Gasanly
- 서명/저자
- Trapping Center Parameters and Optical Absorption in Quaternary Tl₄In₃GaS8, Tl₄In₃Ga₃Se8, and Tl₄In₃GaS₄ Semiconductors / N. M. Gasanly
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 1104-1108
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60147699
MARC
008101208s2007 ulka a eng■022 ▼a03744884
■1001 ▼aN. M. Gasanly
■24510▼aTrapping Center Parameters and Optical Absorption in Quaternary Tl₄In₃GaS8, Tl₄In₃Ga₃Se8, and Tl₄In₃GaS₄ Semiconductors▼dN. M. Gasanly
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 1104-1108
■773 ▼tJournal of The Korean Physical Society▼gVol. 50 No. 4 (2007. 4)▼d2007, 04
■SIS ▼aS039453▼b60077342▼h8▼s2▼fP
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