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Threshold Current Density of 1.3㎛ GaAsSb/GaInAs/GaAs Type-II Trilayer Quantum Well Lasers on GaAs Substrates
Threshold Current Density of 1.3㎛ GaAsSb/GaInAs/GaAs Type-II Trilayer Quantum Well Lasers on GaAs Substrates
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Seoung-Hwan Park
- 서명/저자
- Threshold Current Density of 1.3㎛ GaAsSb/GaInAs/GaAs Type-II Trilayer Quantum Well Lasers on GaAs Substrates / Seoung-Hwan Park , Hwa-Min Kim , Jong-Jae Kim
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 1018-1021
- 기타저자
- Hwa-Min Kim
- 기타저자
- Jong-Jae Kim
- 원문정보
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60147679
MARC
008101208s2007 ulka a eng■022 ▼a03744884
■1001 ▼aSeoung-Hwan Park
■24510▼aThreshold Current Density of 1.3㎛ GaAsSb/GaInAs/GaAs Type-II Trilayer Quantum Well Lasers on GaAs Substrates▼dSeoung-Hwan Park▼eHwa-Min Kim▼eJong-Jae Kim
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 1018-1021
■7001 ▼aHwa-Min Kim
■7001 ▼aJong-Jae Kim
■773 ▼tJournal of The Korean Physical Society▼gVol. 50 No. 4 (2007. 4)▼d2007, 04
■856 ▼ashttp://
■SIS ▼aS039453▼b60077342▼h8▼s2▼fP
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