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Characteristics of n-Type SB-MOSFETs Manufactured by Using a Metal-Gate & a High-K Dielectric
Characteristics of n-Type SB-MOSFETs Manufactured by Using a Metal-Gate & a High-K Dielectric
Detailed Information
- Material Type
- 기사
- ISSN
- 03744884
- Author
- Byoungchul Park
- Title/Author
- Characteristics of n-Type SB-MOSFETs Manufactured by Using a Metal-Gate & a High-K Dielectric / Byoungchul Park ; Hi-Deok Lee ; Yarkyeon Kim ; Moongyu Jang ; Cheljong Choi ; Myungsim Jun ; Taeyoub Kim ; Seongjae Lee
- Publish Info
- 서울 : 한국물리학회, 2007.
- Material Info
- pp. 893-896
- Added Entry-Personal Name
- Hi-Deok Lee
- Added Entry-Personal Name
- Yarkyeon Kim
- Added Entry-Personal Name
- Moongyu Jang
- Added Entry-Personal Name
- Cheljong Choi
- Added Entry-Personal Name
- Myungsim Jun
- Added Entry-Personal Name
- Taeyoub Kim
- Added Entry-Personal Name
- Seongjae Lee
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60147643
MARC
008101208s2007 ulka a eng■022 ▼a03744884
■1001 ▼aByoungchul Park
■24510▼aCharacteristics of n-Type SB-MOSFETs Manufactured by Using a Metal-Gate & a High-K Dielectric▼dByoungchul Park▼eHi-Deok Lee▼eYarkyeon Kim▼eMoongyu Jang▼eCheljong Choi▼eMyungsim Jun▼eTaeyoub Kim▼eSeongjae Lee
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 893-896
■7001 ▼aHi-Deok Lee
■7001 ▼aYarkyeon Kim
■7001 ▼aMoongyu Jang
■7001 ▼aCheljong Choi
■7001 ▼aMyungsim Jun
■7001 ▼aTaeyoub Kim
■7001 ▼aSeongjae Lee
■773 ▼tJournal of The Korean Physical Society▼gVol. 50 No. 3 (2007. 3)▼d2007, 03
■SIS ▼aS037722▼b60077342▼h8▼s2▼fP
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