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Strain-Engineered Magnetic Anisotropy of GaMnAs Ferromagnetic Semiconductors
Strain-Engineered Magnetic Anisotropy of GaMnAs Ferromagnetic Semiconductors
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- T. Kim
- 서명/저자
- Strain-Engineered Magnetic Anisotropy of GaMnAs Ferromagnetic Semiconductors / T. Kim , S. J. Chung , D. Y. Shin , I.S. Choi , Sanghoon Lee , X. Liu , J. K. Furdyna
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 829-833
- 기타저자
- S. J. Chung
- 기타저자
- D. Y. Shin
- 기타저자
- I.S. Choi
- 기타저자
- Sanghoon Lee
- 기타저자
- X. Liu
- 기타저자
- J. K. Furdyna
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60147468
MARC
008101206s2007 ulka a eng■022 ▼a03744884
■1001 ▼aT. Kim
■24510▼aStrain-Engineered Magnetic Anisotropy of GaMnAs Ferromagnetic Semiconductors▼dT. Kim▼eS. J. Chung▼eD. Y. Shin▼eI.S. Choi▼eSanghoon Lee▼eX. Liu▼eJ. K. Furdyna
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 829-833
■7001 ▼aS. J. Chung
■7001 ▼aD. Y. Shin
■7001 ▼aI.S. Choi
■7001 ▼aSanghoon Lee
■7001 ▼aX. Liu
■7001 ▼aJ. K. Furdyna
■773 ▼tJournal of The Korean Physical Society▼gVol. 50 No. 3 (2007. 3)▼d2007, 03
■SIS ▼aS037722▼b60077342▼h8▼s2▼fP
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