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Growth of a GaN Epilayer on a Si (111) Substrate by Using an AIN/GaN Superlattice and Application to a GaN Microcavity Structure with Dielectric-Distributed Bragg Reflector
Growth of a GaN Epilayer on a Si (111) Substrate by Using an AIN/GaN Superlattice and Application to a GaN Microcavity Structure with Dielectric-Distributed Bragg Reflector
Detailed Information
- Material Type
- 기사
- ISSN
- 03744884
- Author
- T. K. Kim
- Title/Author
- Growth of a GaN Epilayer on a Si (111) Substrate by Using an AIN/GaN Superlattice and Application to a GaN Microcavity Structure with Dielectric-Distributed Bragg Reflector / T. K. Kim ; S. S. Yang ; J. K. Son ; Y. G. Hong ; G. M. Yang
- Publish Info
- 서울 : 한국물리학회, 2007.
- Material Info
- pp. 801-805
- Added Entry-Personal Name
- S. S. Yang
- Added Entry-Personal Name
- J. K. Son
- Added Entry-Personal Name
- Y. G. Hong
- Added Entry-Personal Name
- G. M. Yang
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60147462
MARC
008101206s2007 ulka a eng■022 ▼a03744884
■1001 ▼aT. K. Kim
■24510▼aGrowth of a GaN Epilayer on a Si (111) Substrate by Using an AIN/GaN Superlattice and Application to a GaN Microcavity Structure with Dielectric-Distributed Bragg Reflector▼dT. K. Kim▼eS. S. Yang▼eJ. K. Son▼eY. G. Hong▼eG. M. Yang
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 801-805
■7001 ▼aS. S. Yang
■7001 ▼aJ. K. Son
■7001 ▼aY. G. Hong
■7001 ▼aG. M. Yang
■773 ▼tJournal of The Korean Physical Society▼gVol. 50 No. 3 (2007. 3)▼d2007, 03
■SIS ▼aS037722▼b60077342▼h8▼s2▼fP
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