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Effect of NH₃Pretreatment on the Surface Morphologies of GaN Films Grown on Miscut Sapphire Substrates by Using Hydride Vapor Phase Epitaxy
Effect of NH₃Pretreatment on the Surface Morphologies of GaN Films Grown on Miscut Sapphire Substrates by Using Hydride Vapor Phase Epitaxy
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Sanghwa Lee
- 서명/저자
- Effect of NH₃Pretreatment on the Surface Morphologies of GaN Films Grown on Miscut Sapphire Substrates by Using Hydride Vapor Phase Epitaxy / Sanghwa Lee , Taegeon Oh , Boa Shin , Jai Weon Jean , Hyeokmin Choe , Chinkyo Kim
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 785-788
- 기타저자
- Taegeon Oh
- 기타저자
- Boa Shin
- 기타저자
- Jai Weon Jean
- 기타저자
- Hyeokmin Choe
- 기타저자
- Chinkyo Kim
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60147412
MARC
008101203s2007 ulka a eng■022 ▼a03744884
■1001 ▼aSanghwa Lee
■24510▼aEffect of NH₃Pretreatment on the Surface Morphologies of GaN Films Grown on Miscut Sapphire Substrates by Using Hydride Vapor Phase Epitaxy▼dSanghwa Lee▼eTaegeon Oh▼eBoa Shin▼eJai Weon Jean▼eHyeokmin Choe▼eChinkyo Kim
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 785-788
■7001 ▼aTaegeon Oh
■7001 ▼aBoa Shin
■7001 ▼aJai Weon Jean
■7001 ▼aHyeokmin Choe
■7001 ▼aChinkyo Kim
■773 ▼tJournal of The Korean Physical Society▼gVol. 50 No. 3 (2007. 3)▼d2007, 03
■SIS ▼aS037722▼b60077342▼h8▼s2▼fP
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