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Near-field Emission Properties of a Self-formed InAs Quantum Dot Laser diode by Using Near-Field Scanning Optical Microscopy
Near-field Emission Properties of a Self-formed InAs Quantum Dot Laser diode by Using Near-Field Scanning Optical Microscopy
Detailed Information
- Material Type
- 기사
- ISSN
- 03744884
- Author
- S. I. Jung
- Title/Author
- Near-field Emission Properties of a Self-formed InAs Quantum Dot Laser diode by Using Near-Field Scanning Optical Microscopy / S. I. Jung ; H. Y. Yeo ; I. Yun ; I. K. Han ; S. M. Cho ; J. I. Lee
- Publish Info
- 서울 : 한국물리학회, 2007.
- Material Info
- pp. 763-766
- Added Entry-Personal Name
- H. Y. Yeo
- Added Entry-Personal Name
- I. Yun
- Added Entry-Personal Name
- I. K. Han
- Added Entry-Personal Name
- S. M. Cho
- Added Entry-Personal Name
- J. I. Lee
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60147406
MARC
008101203s2007 ulka a eng■022 ▼a03744884
■1001 ▼aS. I. Jung
■24510▼aNear-field Emission Properties of a Self-formed InAs Quantum Dot Laser diode by Using Near-Field Scanning Optical Microscopy▼dS. I. Jung▼eH. Y. Yeo▼eI. Yun▼eI. K. Han▼eS. M. Cho▼eJ. I. Lee
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 763-766
■7001 ▼aH. Y. Yeo
■7001 ▼aI. Yun
■7001 ▼aI. K. Han
■7001 ▼aS. M. Cho
■7001 ▼aJ. I. Lee
■773 ▼tJournal of The Korean Physical Society▼gVol. 50 No. 3 (2007. 3)▼d2007, 03
■SIS ▼aS037722▼b60077342▼h8▼s2▼fP
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