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The Effect of the C Incorporation Pathway on the Growth Rate of Epitaxial SiGec
The Effect of the C Incorporation Pathway on the Growth Rate of Epitaxial SiGec
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- H.-W. Kim
- 서명/저자
- The Effect of the C Incorporation Pathway on the Growth Rate of Epitaxial SiGec / H.-W. Kim , S. Choi , S. Hong , H. K. Jung , G. D. Lee , E. Yoon , C. S. Kim
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 685-689
- 기타저자
- S. Choi
- 기타저자
- S. Hong
- 기타저자
- H. K. Jung
- 기타저자
- G. D. Lee
- 기타저자
- E. Yoon
- 기타저자
- C. S. Kim
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60147305
MARC
008101201s2007 ulka a eng■022 ▼a03744884
■1001 ▼aH.-W. Kim
■24510▼aThe Effect of the C Incorporation Pathway on the Growth Rate of Epitaxial SiGec▼dH.-W. Kim▼e S. Choi▼eS. Hong▼eH. K. Jung▼eG. D. Lee▼eE. Yoon▼eC. S. Kim
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 685-689
■7001 ▼aS. Choi
■7001 ▼aS. Hong
■7001 ▼aH. K. Jung
■7001 ▼aG. D. Lee
■7001 ▼aE. Yoon
■7001 ▼aC. S. Kim
■773 ▼tJournal of The Korean Physical Society▼gVol. 50 No. 3 (2007. 3)▼d2007, 03
■SIS ▼aS037722▼b60077342▼h8▼s2▼fP
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