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Effects of Annealing on the Electrical Properties of the BLT/STA/Si Structure for Ferroelectric-Gate Field-Effect Transistors
Effects of Annealing on the Electrical Properties of the BLT/STA/Si Structure for Ferroelectric-Gate Field-Effect Transistors
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Ho-sung Jeon
- 서명/저자
- Effects of Annealing on the Electrical Properties of the BLT/STA/Si Structure for Ferroelectric-Gate Field-Effect Transistors / Ho-sung Jeon , Kwang-Hun Park , Byung-Eun Park , Chul-Ju Kim
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 731-734
- 기타저자
- Kwang-Hun Park
- 기타저자
- Byung-Eun Park
- 기타저자
- Chul-Ju Kim
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60146867
MARC
008101123s2007 ulka a eng■022 ▼a03744884
■1001 ▼aHo-sung Jeon
■24510▼aEffects of Annealing on the Electrical Properties of the BLT/STA/Si Structure for Ferroelectric-Gate Field-Effect Transistors▼dHo-sung Jeon▼eKwang-Hun Park▼eByung-Eun Park▼eChul-Ju Kim
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 731-734
■7001 ▼aKwang-Hun Park
■7001 ▼aByung-Eun Park
■7001 ▼aChul-Ju Kim
■773 ▼tJournal of The Korean Physical Society▼gVol. 51 No. 2 Pt.1(2007. 8)▼d2007, 08
■SIS ▼aS041153▼b60077342▼h8▼s2▼fP
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