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Post-RTA Effect on the Electrical Characteristics of Nano-Scale Strained Si Grown on SiGe-on-Insulator n-MOSFET
Post-RTA Effect on the Electrical Characteristics of Nano-Scale Strained Si Grown on SiGe-on-Insulator n-MOSFET
Detailed Information
- Material Type
- 기사
- ISSN
- 03744884
- Author
- Seong-Je Kim
- Title/Author
- Post-RTA Effect on the Electrical Characteristics of Nano-Scale Strained Si Grown on SiGe-on-Insulator n-MOSFET / Seong-Je Kim ; Tae-Hun Shim ; Jea-Gun Park ; Myung-Ho Jung ; Won-Ju Cho
- Publish Info
- 서울 : 한국물리학회, 2007.
- Material Info
- pp. 514-518
- Added Entry-Personal Name
- Tae-Hun Shim
- Added Entry-Personal Name
- Jea-Gun Park
- Added Entry-Personal Name
- Myung-Ho Jung
- Added Entry-Personal Name
- Won-Ju Cho
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60146777
MARC
008101122s2007 ulka a eng■022 ▼a03744884
■1001 ▼aSeong-Je Kim
■24510▼aPost-RTA Effect on the Electrical Characteristics of Nano-Scale Strained Si Grown on SiGe-on-Insulator n-MOSFET▼dSeong-Je Kim▼eTae-Hun Shim▼eJea-Gun Park▼eMyung-Ho Jung▼eWon-Ju Cho
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 514-518
■7001 ▼aTae-Hun Shim
■7001 ▼aJea-Gun Park
■7001 ▼aMyung-Ho Jung
■7001 ▼aWon-Ju Cho
■773 ▼tJournal of The Korean Physical Society▼gVol. 50 No. 2 (2007. 2)▼d2007, 02
■SIS ▼aS037588▼b60077342▼h8▼s2▼fP
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