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Strucrural Properties of GaSb Layers Grown on InAs, AlSb, and GaSb Buffer Layers on GaAs (001) Substrates
Strucrural Properties of GaSb Layers Grown on InAs, AlSb, and GaSb Buffer Layers on GaAs (001) Substrates
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Y. K. Noh
- 서명/저자
- Strucrural Properties of GaSb Layers Grown on InAs, AlSb, and GaSb Buffer Layers on GaAs (001) Substrates / Y. K. Noh , Y. J. Hwang , M. D. Kim , Y. J. Kwon , J. E. Oh , Y. H. Kim , J. Y. Lee
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 1929-1932
- 기타저자
- Y. J. Hwang
- 기타저자
- M. D. Kim
- 기타저자
- Y. J. Kwon
- 기타저자
- J. E. Oh
- 기타저자
- Y. H. Kim
- 기타저자
- J. Y. Lee
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60146389
MARC
008101115s2007 ulka a eng■022 ▼a03744884
■1001 ▼aY. K. Noh
■24510▼aStrucrural Properties of GaSb Layers Grown on InAs, AlSb, and GaSb Buffer Layers on GaAs (001) Substrates▼dY. K. Noh▼eY. J. Hwang▼eM. D. Kim▼eY. J. Kwon▼eJ. E. Oh▼eY. H. Kim▼eJ. Y. Lee
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 1929-1932
■7001 ▼aY. J. Hwang
■7001 ▼aM. D. Kim
■7001 ▼aY. J. Kwon
■7001 ▼aJ. E. Oh
■7001 ▼aY. H. Kim
■7001 ▼aJ. Y. Lee
■773 ▼tJournal of The Korean Physical Society▼gVol. 50 No. 6 (2007. 6)▼d2007, 06
■SIS ▼aS040681▼b60077342▼h8▼s2▼fP
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