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Electron and Hole Storage in a Floating Gate consisting of si Nanocrystals Embedded in a SiO₂Layer
Electron and Hole Storage in a Floating Gate consisting of si Nanocrystals Embedded in a SiO₂Layer
Detailed Information
- Material Type
- 기사
- ISSN
- 03744884
- Author
- Do-Hyun Oh
- Title/Author
- Electron and Hole Storage in a Floating Gate consisting of si Nanocrystals Embedded in a SiO₂Layer / Do-Hyun Oh ; SooJin Lee ; Woon-Jo Cho ; Jae-Ho Kim ; Tae Whan Kim
- Publish Info
- 서울 : 한국물리학회, 2007.
- Material Info
- pp. 1755-1759
- Added Entry-Personal Name
- SooJin Lee
- Added Entry-Personal Name
- Woon-Jo Cho
- Added Entry-Personal Name
- Jae-Ho Kim
- Added Entry-Personal Name
- Tae Whan Kim
- Electronic Location and Access
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60145946
MARC
008101027s2007 ulka a eng■022 ▼a03744884
■1001 ▼aDo-Hyun Oh
■24510▼aElectron and Hole Storage in a Floating Gate consisting of si Nanocrystals Embedded in a SiO₂Layer▼dDo-Hyun Oh▼eSooJin Lee▼eWoon-Jo Cho▼eJae-Ho Kim▼eTae Whan Kim
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 1755-1759
■7001 ▼aSooJin Lee
■7001 ▼aWoon-Jo Cho
■7001 ▼aJae-Ho Kim
■7001 ▼aTae Whan Kim
■773 ▼tJournal of The Korean Physical Society▼gVol. 50 No. 6 (2007. 6)▼d2007, 06
■856 ▼aoon-Jo cho;
■SIS ▼aS040681▼b60077342▼h8▼s2▼fP
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