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Resistive Switching Characteristics of HfO₂ Grown by Atomic Layer Deposition
Resistive Switching Characteristics of HfO₂ Grown by Atomic Layer Deposition
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Kyong-Rae Kim
- 서명/저자
- Resistive Switching Characteristics of HfO₂ Grown by Atomic Layer Deposition / Kyong-Rae Kim , In-Sung Park , Jin Pyo Hong , Sang Seol Lee , Bang lim Choi , Jinho Ahn
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 548-551
- 기타저자
- In-Sung Park
- 기타저자
- Jin Pyo Hong
- 기타저자
- Sang Seol Lee
- 기타저자
- Bang lim Choi
- 기타저자
- Jinho Ahn
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60145873
MARC
008101027s2007 ulka a eng■022 ▼a03744884
■1001 ▼aKyong-Rae Kim
■24510▼aResistive Switching Characteristics of HfO₂ Grown by Atomic Layer Deposition▼dKyong-Rae Kim▼eIn-Sung Park▼eJin Pyo Hong▼eSang Seol Lee▼eBang lim Choi▼eJinho Ahn
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 548-551
■7001 ▼aIn-Sung Park
■7001 ▼aJin Pyo Hong
■7001 ▼aSang Seol Lee
■7001 ▼aBang lim Choi
■7001 ▼aJinho Ahn
■773 ▼tJournal of The Korean Physical Society▼gVol. 49 supplementary isssu II.(2006.12)▼d2007, 01
■SIS ▼aS036913▼b60077342▼h8▼s2▼fP
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