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Effective Electrochemical Gating of Hole Transport in Aligned Single-Walled Carbon Nanotube Network Thin film Transistors
Effective Electrochemical Gating of Hole Transport in Aligned Single-Walled Carbon Nanotub...
Effective Electrochemical Gating of Hole Transport in Aligned Single-Walled Carbon Nanotube Network Thin film Transistors

Detailed Information

자료유형  
 기사
ISSN  
03744884
저자명  
Bonghyun Park
서명/저자  
Effective Electrochemical Gating of Hole Transport in Aligned Single-Walled Carbon Nanotube Network Thin film Transistors / Bonghyun Park , Chae-Hyun Lim , Hyeong-Seok Jeon , Chang-Seung Woo , Yoon-Sun Hwang , Sung-Jin Choi , Chi-Won Cho , Cheol-Jin Lee , Seung-Beck Lee
발행사항  
서울 : 한국물리학회, 2007.
형태사항  
pp. S828-S832
기타저자  
Chae-Hyun Lim
기타저자  
Hyeong-Seok Jeon
기타저자  
Chang-Seung Woo
기타저자  
Yoon-Sun Hwang
기타저자  
Sung-Jin Choi
기타저자  
Chi-Won Cho
기타저자  
Cheol-Jin Lee
기타저자  
Seung-Beck Lee
기본자료저록  
Journal of The Korean Physical Society : Vol. 49 supplementary isssu III.(2006.12) 2007, 01
모체레코드  
모체정보확인
Control Number  
kjul:60145459

MARC

 008101018s2007        ulka    a                          eng
■022    ▼a03744884
■1001  ▼aBonghyun  Park
■24510▼aEffective  Electrochemical  Gating  of  Hole  Transport  in  Aligned  Single-Walled  Carbon  Nanotube  Network  Thin  film  Transistors▼dBonghyun  Park▼eChae-Hyun  Lim▼eHyeong-Seok  Jeon▼eChang-Seung  Woo▼eYoon-Sun  Hwang▼eSung-Jin  Choi▼eChi-Won  Cho▼eCheol-Jin  Lee▼eSeung-Beck  Lee  
■260    ▼a서울▼b한국물리학회▼c2007.
■300    ▼app.  S828-S832
■7001  ▼aChae-Hyun  Lim
■7001  ▼aHyeong-Seok  Jeon
■7001  ▼aChang-Seung  Woo
■7001  ▼aYoon-Sun  Hwang
■7001  ▼aSung-Jin  Choi
■7001  ▼aChi-Won  Cho
■7001  ▼aCheol-Jin  Lee
■7001  ▼aSeung-Beck  Lee
■773    ▼tJournal  of  The  Korean  Physical  Society▼gVol.  49  supplementary  isssu  III.(2006.12)▼d2007,  01
■SIS    ▼aS036912▼b60077342▼h8▼s2▼fP

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