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Characterization and Improvement of Reverse Leakage Current of Shallow Silicided Junction for Sub-100 nm CMOS TEchnology Utilizing N₂PAI
Characterization and Improvement of Reverse Leakage Current of Shallow Silicided Junction for Sub-100 nm CMOS TEchnology Utilizing N₂PAI
Detailed Information
- Material Type
- 기사
- ISSN
- 03744884
- Author
- Kyong-Jin Hwang
- Title/Author
- Characterization and Improvement of Reverse Leakage Current of Shallow Silicided Junction for Sub-100 nm CMOS TEchnology Utilizing N₂PAI / Kyong-Jin Hwang ; Jong-Hyuck Oh ; Nag-Kyun Sung ; Doo=Yeol Ryu ; Seung-Hoon Sa ; Kun-Joo Park ; Jong-Kon Lee ; Jeong-gun Lee ; Sung-Hyung Park ; Tea-Gyu Goo ; Hi-Deok Lee
- Publish Info
- 서울 : 한국물리학회, 2007.
- Material Info
- pp. S795-S799
- Added Entry-Personal Name
- Jong-Hyuck Oh
- Added Entry-Personal Name
- Nag-Kyun Sung
- Added Entry-Personal Name
- Doo=Yeol Ryu
- Added Entry-Personal Name
- Seung-Hoon Sa
- Added Entry-Personal Name
- Kun-Joo Park
- Added Entry-Personal Name
- Jong-Kon Lee
- Added Entry-Personal Name
- Jeong-gun Lee
- Added Entry-Personal Name
- Sung-Hyung Park
- Added Entry-Personal Name
- Tea-Gyu Goo
- Added Entry-Personal Name
- Hi-Deok Lee
- Host Item Entry
- Journal of The Korean Physical Society : Vol. 49 supplementary isssu III.(2006.12) 2007, 01
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60145410
MARC
008101018s2007 ulka a eng■022 ▼a03744884
■1001 ▼aKyong-Jin Hwang
■24510▼aCharacterization and Improvement of Reverse Leakage Current of Shallow Silicided Junction for Sub-100 nm CMOS TEchnology Utilizing N₂PAI▼dKyong-Jin Hwang▼eJong-Hyuck Oh▼eNag-Kyun Sung▼eDoo=Yeol Ryu▼eSeung-Hoon Sa▼eKun-Joo Park ▼eJong-Kon Lee▼eJeong-gun Lee▼eSung-Hyung Park▼eTea-Gyu Goo▼eHi-Deok Lee
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. S795-S799
■7001 ▼aJong-Hyuck Oh
■7001 ▼aNag-Kyun Sung
■7001 ▼aDoo=Yeol Ryu
■7001 ▼aSeung-Hoon Sa
■7001 ▼aKun-Joo Park
■7001 ▼aJong-Kon Lee
■7001 ▼aJeong-gun Lee
■7001 ▼aSung-Hyung Park
■7001 ▼aTea-Gyu Goo
■7001 ▼aHi-Deok Lee
■773 ▼tJournal of The Korean Physical Society▼gVol. 49 supplementary isssu III.(2006.12)▼d2007, 01
■SIS ▼aS036912▼b60077342▼h8▼s2▼fP
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