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Fabrication and Characteristics of 01.12 ㎛ single and couble-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
Fabrication and Characteristics of 01.12 ㎛ single and couble-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Jong-Won Lim
- 서명/저자
- Fabrication and Characteristics of 01.12 ㎛ single and couble-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer / Jong-Won Lim , Ho-Kyun Ahn , Hong-Gu Ji , WooJin Chang , Jae-Kyoung Mun , Haecheon Kim , Hyun-Kyu Yu
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. S774-S779
- 기타저자
- Ho-Kyun Ahn
- 기타저자
- Hong-Gu Ji
- 기타저자
- WooJin Chang
- 기타저자
- Jae-Kyoung Mun
- 기타저자
- Haecheon Kim
- 기타저자
- Hyun-Kyu Yu
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60145406
MARC
008101018s2007 ulka a eng■022 ▼a03744884
■1001 ▼aJong-Won Lim
■24510▼aFabrication and Characteristics of 01.12 ㎛ single and couble-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer▼dJong-Won Lim▼eHo-Kyun Ahn▼eHong-Gu Ji▼eWooJin Chang▼eJae-Kyoung Mun▼eHaecheon Kim▼eHyun-Kyu Yu
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. S774-S779
■7001 ▼aHo-Kyun Ahn
■7001 ▼aHong-Gu Ji
■7001 ▼aWooJin Chang
■7001 ▼aJae-Kyoung Mun
■7001 ▼aHaecheon Kim
■7001 ▼aHyun-Kyu Yu
■773 ▼tJournal of The Korean Physical Society▼gVol. 49 supplementary isssu III.(2006.12)▼d2007, 01
■SIS ▼aS036912▼b60077342▼h8▼s2▼fP
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