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A Study on Interface Layer with Annealing Conditions of ZrO₂/ZrSixOy High-k Gate Oxide
A Study on Interface Layer with Annealing Conditions of ZrO₂/ZrSixOy High-k Gate Oxide
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MARC
008101018s2007 ulka a eng■022 ▼a03744884
■1001 ▼aH.-D. Kim
■24510▼aA Study on Interface Layer with Annealing Conditions of ZrO₂/ZrSixOy High-k Gate Oxide▼dH.-D. Kim▼eY. Roh
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. S755-S759
■7001 ▼aY. Roh
■773 ▼tJournal of The Korean Physical Society▼gVol. 49 supplementary isssu III.(2006.12)▼d2007, 01
■SIS ▼aS036912▼b60077342▼h8▼s2▼fP
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