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A Study on Interface Layer with Annealing Conditions of ZrO₂/ZrSixOy High-k Gate Oxide
A Study on Interface Layer with Annealing Conditions of ZrO₂/ZrSixOy High-k Gate Oxide / ...
A Study on Interface Layer with Annealing Conditions of ZrO₂/ZrSixOy High-k Gate Oxide

Detailed Information

자료유형  
 기사
ISSN  
03744884
저자명  
H.-D. Kim
서명/저자  
A Study on Interface Layer with Annealing Conditions of ZrO₂/ZrSixOy High-k Gate Oxide / H.-D. Kim , Y. Roh
발행사항  
서울 : 한국물리학회, 2007.
형태사항  
pp. S755-S759
기타저자  
Y. Roh
기본자료저록  
Journal of The Korean Physical Society : Vol. 49 supplementary isssu III.(2006.12) 2007, 01
모체레코드  
모체정보확인
Control Number  
kjul:60145402

MARC

 008101018s2007        ulka    a                          eng
■022    ▼a03744884
■1001  ▼aH.-D.  Kim
■24510▼aA  Study  on  Interface  Layer  with  Annealing  Conditions  of  ZrO₂/ZrSixOy  High-k  Gate  Oxide▼dH.-D.  Kim▼eY.  Roh
■260    ▼a서울▼b한국물리학회▼c2007.
■300    ▼app.  S755-S759
■7001  ▼aY.  Roh
■773    ▼tJournal  of  The  Korean  Physical  Society▼gVol.  49  supplementary  isssu  III.(2006.12)▼d2007,  01
■SIS    ▼aS036912▼b60077342▼h8▼s2▼fP

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