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Selective Area Growth and Properties of Truncated-Pyramid InGaN/GaN MQW Structure on Si(111) Substrate with Various Filling Ratios
Selective Area Growth and Properties of Truncated-Pyramid InGaN/GaN MQW Structure on Si(111) Substrate with Various Filling Ratios
Detailed Information
- Material Type
- 기사
- ISSN
- 03744884
- Author
- Tae Su Oh
- Title/Author
- Selective Area Growth and Properties of Truncated-Pyramid InGaN/GaN MQW Structure on Si(111) Substrate with Various Filling Ratios / Tae Su Oh ; Kang Jeal Lee ; Kee Young Lim ; Ok Hwan Cha ; Mun Seok Jeong
- Publish Info
- 서울 : 한국물리학회, 2007.
- Material Info
- pp. S745-S749
- Added Entry-Personal Name
- Kang Jeal Lee
- Added Entry-Personal Name
- Kee Young Lim
- Added Entry-Personal Name
- Ok Hwan Cha
- Added Entry-Personal Name
- Mun Seok Jeong
- Host Item Entry
- Journal of The Korean Physical Society : Vol. 49 supplementary isssu III.(2006.12) 2007, 01
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60145341
MARC
008101015s2007 ulka a eng■022 ▼a03744884
■1001 ▼aTae Su Oh
■24510▼aSelective Area Growth and Properties of Truncated-Pyramid InGaN/GaN MQW Structure on Si(111) Substrate with Various Filling Ratios▼dTae Su Oh▼eKang Jeal Lee▼eKee Young Lim▼eOk Hwan Cha▼eMun Seok Jeong
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. S745-S749
■7001 ▼aKang Jeal Lee
■7001 ▼aKee Young Lim
■7001 ▼aOk Hwan Cha
■7001 ▼aMun Seok Jeong
■773 ▼tJournal of The Korean Physical Society▼gVol. 49 supplementary isssu III.(2006.12)▼d2007, 01
■SIS ▼aS036912▼b60077342▼h8▼s2▼fP
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