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Tunneling Characteristics in Epitaxial MgB₂Tunnel Junctions with Amorphous and Epitaxial Tunnel Barriers
Tunneling Characteristics in Epitaxial MgB₂Tunnel Junctions with Amorphous and Epitaxial Tunnel Barriers
상세정보
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Tae Hee Kim
- 서명/저자
- Tunneling Characteristics in Epitaxial MgB₂Tunnel Junctions with Amorphous and Epitaxial Tunnel Barriers / Tae Hee Kim
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 1881-1884
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60145081
MARC
008101013s2006 ulka a eng■022 ▼a03744884
■1001 ▼aTae Hee Kim
■24510▼aTunneling Characteristics in Epitaxial MgB₂Tunnel Junctions with Amorphous and Epitaxial Tunnel Barriers▼dTae Hee Kim
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 1881-1884
■773 ▼tJournal of The Korean Physical Society▼gVol. 49 No. 5 (2006. 11)▼d2006, 11
■SIS ▼aS036672▼b60077342▼h8▼s2▼fP
