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CF₄-Based Neutral-Beam Etch Characteristics of Si and SiO₂Using a Low-Angle forward-Reflected Neutral-beam Etching System
CF₄-Based Neutral-Beam Etch Characteristics of Si and SiO₂Using a Low-Angle forward-Reflected Neutral-beam Etching System
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- D. H. Lee
- 서명/저자
- CF₄-Based Neutral-Beam Etch Characteristics of Si and SiO₂Using a Low-Angle forward-Reflected Neutral-beam Etching System / D. H. Lee , B. J. Park , K. S. Min , G. Y. Yeon
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 2307-2310
- 기타저자
- B. J. Park
- 기타저자
- K. S. Min
- 기타저자
- G. Y. Yeon
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60144996
MARC
008101013s2006 ulka a eng■022 ▼a03744884
■1001 ▼aD. H. Lee
■24510▼aCF₄-Based Neutral-Beam Etch Characteristics of Si and SiO₂Using a Low-Angle forward-Reflected Neutral-beam Etching System▼dD. H. Lee▼eB. J. Park▼eK. S. Min▼eG. Y. Yeon
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 2307-2310
■7001 ▼aB. J. Park
■7001 ▼aK. S. Min
■7001 ▼aG. Y. Yeon
■773 ▼tJournal of The Korean Physical Society▼gVol. 49 No. 6 (2006. 12)▼d2006, 12
■SIS ▼aS037057▼b60077342▼h8▼s2▼fP
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