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Effect of a Gate Bias Voltage on Quantum Dots in single-Walled Carbon Nanotubes
Effect of a Gate Bias Voltage on Quantum Dots in single-Walled Carbon Nanotubes
Detailed Information
- Material Type
- 기사
- ISSN
- 03744884
- Author
- Jae-Ryoung Kim
- Title/Author
- Effect of a Gate Bias Voltage on Quantum Dots in single-Walled Carbon Nanotubes / Jae-Ryoung Kim ; Byoung-Kye Kim ; So-Ra Kim ; Ju-Jin Kim ; Jeong-O Lee ; Jinhee Kim
- Publish Info
- 서울 : 한국물리학회, 2006.
- Material Info
- pp. 1694-1698
- Added Entry-Personal Name
- Byoung-Kye Kim
- Added Entry-Personal Name
- So-Ra Kim
- Added Entry-Personal Name
- Ju-Jin Kim
- Added Entry-Personal Name
- Jeong-O Lee
- Added Entry-Personal Name
- Jinhee Kim
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60144935
MARC
008101012s2006 ulka a eng■022 ▼a03744884
■1001 ▼aJae-Ryoung Kim
■24510▼aEffect of a Gate Bias Voltage on Quantum Dots in single-Walled Carbon Nanotubes▼dJae-Ryoung Kim▼eByoung-Kye Kim▼eSo-Ra Kim▼eJu-Jin Kim▼eJeong-O Lee▼eJinhee Kim
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 1694-1698
■7001 ▼aByoung-Kye Kim
■7001 ▼aSo-Ra Kim
■7001 ▼aJu-Jin Kim
■7001 ▼aJeong-O Lee
■7001 ▼aJinhee Kim
■773 ▼tJournal of The Korean Physical Society▼gVol. 49 No. 4 (2006. 10)▼d2006, 10
■SIS ▼aS035357▼b60077342▼h8▼s2▼fP
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