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Electron Behavior and Impurity Properties as Functions of Growth Temperature for InN Grown by Using Plasma-Assisted Molecular Beam Epitaxy
Electron Behavior and Impurity Properties as Functions of Growth Temperature for InN Grown by Using Plasma-Assisted Molecular Beam Epitaxy
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- E. S. Hwang
- 서명/저자
- Electron Behavior and Impurity Properties as Functions of Growth Temperature for InN Grown by Using Plasma-Assisted Molecular Beam Epitaxy / E. S. Hwang , E. M. park , E.-K. Suh , C.-H. Hong , H. J. Lee , X. Wang , S. B. Che , Y. Ishitani , A. Yoshikawa
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 1530-1535
- 기타저자
- E. M. park
- 기타저자
- E.-K. Suh
- 기타저자
- C.-H. Hong
- 기타저자
- H. J. Lee
- 기타저자
- X. Wang
- 기타저자
- S. B. Che
- 기타저자
- Y. Ishitani
- 기타저자
- A. Yoshikawa
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60144831
MARC
008101012s2006 ulka a eng■022 ▼a03744884
■1001 ▼aE. S. Hwang
■24510▼aElectron Behavior and Impurity Properties as Functions of Growth Temperature for InN Grown by Using Plasma-Assisted Molecular Beam Epitaxy▼dE. S. Hwang▼eE. M. park▼eE.-K. Suh▼eC.-H. Hong▼eH. J. Lee▼eX. Wang▼eS. B. Che▼eY. Ishitani▼eA. Yoshikawa
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 1530-1535
■7001 ▼aE. M. park
■7001 ▼aE.-K. Suh
■7001 ▼aC.-H. Hong
■7001 ▼aH. J. Lee
■7001 ▼aX. Wang
■7001 ▼aS. B. Che
■7001 ▼aY. Ishitani
■7001 ▼aA. Yoshikawa
■773 ▼tJournal of The Korean Physical Society▼gVol. 49 No. 4 (2006. 10)▼d2006, 10
■SIS ▼aS035357▼b60077342▼h8▼s2▼fP
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